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Grant: Discovery Grants Program - Individual

University of Ontario Institute of Technology

$13,084.00

Staebler-Wronski effect in tritiated amorphous silicon

FY 2012-13

Summary
Hydrogenated amorphous silicon (a-Si:H)-represents one of the most important materials in the areas of photovoltaics and microelectronics. The introduction of tritium (an isotope of hydrogen) into amorphous materials has spurred fundamental studies on the nature of dangling bond defects and metastability. In 1995 the applicant initiated a systematic research of the properties of tritiated amorphous silicon. Preliminary studies have shown that tritium can be permanently bonded in amorphous silicon, thereby rendering this radioactive substance relatively safe. Phenomena associated with the decay of tritium offer a very powerful new tool in the study of amorphous semiconductors. In particular, Tritium decay within the a-Si:H network can be used to simulate and analyze the Staebler-Wronski (S-W) effect, which is responsible for the degradation of the opto-electronic properties of a-Si:H. Furthermore, the energy released during the decay can be harnessed and transformed into other, useful and harmless, forms of energy. The main objectives of this proposal are: to achieve a better understanding of the physical properties of amorphous semiconductors and of the effects of tritium in amorphous semiconductors. The research will be conducted at both theoretical and experimental levels. In addition, the energy ""crunch"" has brought the ""nuclear solution"" back to the forefront, and the Canadian nuclear plants, based on the CANDU reactor, represent a major and unique source of Tritium gas. This research will lead to the development and to the safe utilization of tritium in microelectronic devices, having the potential to benefit Canadian industry via exploration of practical applications of tritiated amorphous semiconductors, including self-powered light emitting devices and batteries. At least three M.Sc. students in the recently approved Master in Materials Science program will be involved in the research over the course of 5 years; several undergraduate students will also be involved in summer projects. The students will be provided training to: i) use Ab Initio Molecular Dynamics (AIMD) to simulate optoelectronic properties of semiconductors and other materials, ii) perform the experimental measurements required for the project.
Program
Discovery Grants Program - Individual
Location
Ontario, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data

As published

Application id
341444-2008
Name nom
Gaspari, Franco
Department département
Science, Faculty of
Organization id
19222
Institution établissement
University of Ontario Institute of Technology
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2012
Competition year année de concours
2008
Award amount
13084
Program id
RGPIN
Program name en
Discovery Grants Program - Individual
Program name fr
Programme de subventions à la découverte - individuelles
Group en
Discovery grants programs
Group fr
Programmes de subventions à la découverte
Committee code
28
Committee name en
Condensed Matter Physics
Committee name fr
Phys. de la matière condensée
Area of application code
303
Area of application group en
Energy resources
Area of application group fr
Ressources d'énergie
Area of application en
Alternative energy resources
Area of application fr
Autres ressources d'énergie
Research subject code
3304
Research subject group en
Condensed matterphysics
Research subject group fr
Physique de la matière condensée
Research subject en
Semiconductors
Research subject fr
Semiconducteurs
Partie
5
Nb partie
5
Application title
Staebler-Wronski effect in tritiated amorphous silicon
Keyword
NSERC
Application summary
Hydrogenated amorphous silicon (a-Si:H)-represents one of the most important materials in the areas of photovoltaics and microelectronics. The introduction of tritium (an isotope of hydrogen) into amorphous materials has spurred fundamental studies on the nature of dangling bond defects and metastability. In 1995 the applicant initiated a systematic research of the properties of tritiated amorphous silicon. Preliminary studies have shown that tritium can be permanently bonded in amorphous silicon, thereby rendering this radioactive substance relatively safe. Phenomena associated with the decay of tritium offer a very powerful new tool in the study of amorphous semiconductors. In particular, Tritium decay within the a-Si:H network can be used to simulate and analyze the Staebler-Wronski (S-W) effect, which is responsible for the degradation of the opto-electronic properties of a-Si:H. Furthermore, the energy released during the decay can be harnessed and transformed into other, useful and harmless, forms of energy. The main objectives of this proposal are: to achieve a better understanding of the physical properties of amorphous semiconductors and of the effects of tritium in amorphous semiconductors. The research will be conducted at both theoretical and experimental levels. In addition, the energy ""crunch"" has brought the ""nuclear solution"" back to the forefront, and the Canadian nuclear plants, based on the CANDU reactor, represent a major and unique source of Tritium gas. This research will lead to the development and to the safe utilization of tritium in microelectronic devices, having the potential to benefit Canadian industry via exploration of practical applications of tritiated amorphous semiconductors, including self-powered light emitting devices and batteries. At least three M.Sc. students in the recently approved Master in Materials Science program will be involved in the research over the course of 5 years; several undergraduate students will also be involved in summer projects. The students will be provided training to: i) use Ab Initio Molecular Dynamics (AIMD) to simulate optoelectronic properties of semiconductors and other materials, ii) perform the experimental measurements required for the project.