Grant: Research Tools and Instruments - Category 1 (<$150,000)
University of Waterloo
$150,000.00
High resolution X-ray Diffractometer for MBE-grown novel quantum device research
FY 2012-13
Summary
The roots of the currently unfolding technological revolution which brought about personal computers, fast internet, digital cameras and flat panel displays-to mention just the commodity sector-can be traced directly to the advances in engineering of very thin films of artificial materials and their subsequent processing into ever smaller devices with well controlled functionalities. The highest performance electronic devices, such as transistors used in PCs, smartphones or satellites and the photonic devices such as semiconductor lasers, amplifiers and detectors which are pushing digital information with incredible rates along the optical fibers of the world wide web, are all based on highly perfect crystalline multilayers of semiconductor materials which are deposited in the so-called epitaxial process on suitably chosen crystalline substrates. The performance of these devices depends critically on the exact thicknesses and compositions of the individual sub-layers, some just a few nanometers thick. Development of the epitaxial techniques capable of such precision, related calibrations and ongoing process monitoring all require metrology tools which can be used routinely, be non-destructive and meet the strict requirements of resolution and accuracy. For the semiconductor industry and R&D which relies on epitaxial structures there is only one such tool - the High Resolution X-ray Diffractometer (HR-XRD), the subject of the present grant application. This tool is crucial to the success of the research programs hosted in and supported by the Molecular Beam Epitaxy (MBE) laboratory which is being presently set up in the new Quantum Nano Centre at the University of Waterloo and is expected to be fully operational in the second quarter of 2013. The focus of the lab will be on the epitaxial growth of advanced quantum devices based on (In, Al, Ga)(As, Sb) semiconductor materials for ground-breaking research programs in photonics, nanoelectronics, spintronics and quantum computing that address both short and long term challenges of Canadian high-tech sectors in environmental monitoring, alternative clean energy sources, health, security and ICT.
Program
Research Tools and Instruments - Category 1 (<$150,000)
Recipient
Location
Ontario, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data
As published
Application id
439977-2013
Name nom
Wasilewski, Zbigniew
Department département
Electrical & Computer Engineering
Organization id
33
Institution établissement
University of Waterloo
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2012
Competition year année de concours
2013
Award amount
150000
Program id
EQPEQ
Program name en
Research Tools and Instruments - Category 1 (<$150,000)
Program name fr
Outils et instruments de recherche - catégorie 1 (<150 000$)
Group en
Discovery grants programs
Group fr
Programmes de subventions à la découverte
Committee code
1510
Committee name en
Electrical and Computer Engineering
Committee name fr
Génie électrique et informatique
Area of application code
1208
Area of application group en
Advancement of knowledge
Area of application group fr
Avancement des connaissances
Area of application en
Materials sciences
Area of application fr
Sciences des matériaux
Research subject code
3304
Research subject group en
Condensed matterphysics
Research subject group fr
Physique de la matière condensée
Research subject en
Semiconductors
Research subject fr
Semiconducteurs
Partie
1
Nb partie
1
Application title
High resolution X-ray Diffractometer for MBE-grown novel quantum device research
Keyword
NSERC
Application summary
The roots of the currently unfolding technological revolution which brought about personal computers, fast internet, digital cameras and flat panel displays-to mention just the commodity sector-can be traced directly to the advances in engineering of very thin films of artificial materials and their subsequent processing into ever smaller devices with well controlled functionalities. The highest performance electronic devices, such as transistors used in PCs, smartphones or satellites and the photonic devices such as semiconductor lasers, amplifiers and detectors which are pushing digital information with incredible rates along the optical fibers of the world wide web, are all based on highly perfect crystalline multilayers of semiconductor materials which are deposited in the so-called epitaxial process on suitably chosen crystalline substrates. The performance of these devices depends critically on the exact thicknesses and compositions of the individual sub-layers, some just a few nanometers thick. Development of the epitaxial techniques capable of such precision, related calibrations and ongoing process monitoring all require metrology tools which can be used routinely, be non-destructive and meet the strict requirements of resolution and accuracy. For the semiconductor industry and R&D which relies on epitaxial structures there is only one such tool - the High Resolution X-ray Diffractometer (HR-XRD), the subject of the present grant application. This tool is crucial to the success of the research programs hosted in and supported by the Molecular Beam Epitaxy (MBE) laboratory which is being presently set up in the new Quantum Nano Centre at the University of Waterloo and is expected to be fully operational in the second quarter of 2013. The focus of the lab will be on the epitaxial growth of advanced quantum devices based on (In, Al, Ga)(As, Sb) semiconductor materials for ground-breaking research programs in photonics, nanoelectronics, spintronics and quantum computing that address both short and long term challenges of Canadian high-tech sectors in environmental monitoring, alternative clean energy sources, health, security and ICT.