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Grant: Discovery Grants Program - Individual

University of Waterloo

$70,000.00

Digital and Memory Circuits in nano-scale CMOS Technologies

FY 2016-17

Summary
Realization of robust integrated circuits in state of the art technologies is becoming increasingly difficult. The technology scaling makes transistors susceptible to process variations, and improper functioning of a single transistor may lead to the chip failure containing several million transistors. Often small as possible transistor sizes are used to reduce power, energy consumption, and to increase the packing density. Unfortunately, transistors with smaller dimensions exhibit a higher susceptibility to process variation. In particular, low-voltage, low-power Static Random Access Memory (SRAM) circuits show higher degree of variation owing to smallest possible transistor dimensions. In this research, we will investigate variability-aware design of digital, SRAM circuits in power and voltage constrained environments. In microprocessors up to 70-80% of transistors are in SRAMs. As a consequence, various aspects of Systems on Chip (SoC) - power, energy, yield, quality, and reliability are influenced by SRAMs. The proposed research has two broad segments - (a) SRAM circuits, and (b) logic circuits. In the first segment, few aspects of SRAMs will be investigated. The key objectives of this research are (i) to lower SRAM power consumption through architectural and circuit innovation. We will design functional SRAMs working at sub-threshold voltages. (ii) To devise circuit techniques to alleviate the impact of process variations on important SRAM blocks such as the sense amplifier. We will investigate new architectures and circuits for the sense amplifier. (iii) Design soft error robust SRAM cells that can recover from single event upsets. In the second segment of the research, we will investigate high speed digital circuits working at the nominal voltage. Research on high speed circuits will entail investigation of high speed logic styles. This work builds on our recent research on Constant Delay (CD) logic style. Building blocks such as adder will be designed to demonstrate effectiveness of new logic families for high-speed applications.
Program
Discovery Grants Program - Individual
Location
Ontario, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data

As published

Application id
205034-2012
Name nom
Sachdev, Manoj
Department département
Electrical & Computer Engineering
Organization id
33
Institution établissement
University of Waterloo
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2016
Competition year année de concours
2012
Award amount
70000
Program id
RGPIN
Program name en
Discovery Grants Program - Individual
Program name fr
Programme de subventions à la découverte - individuelles
Group en
Discovery grants programs
Group fr
Programmes de subventions à la découverte
Committee code
1510
Committee name en
Electrical and Computer Engineering
Committee name fr
Génie électrique et informatique
Area of application code
513
Area of application group en
Manufacturing processes and products
Area of application group fr
Procédés et produits industriels
Area of application en
Electrical and electronic machinery and equipment (including computer hardware)
Area of application fr
Machinerie et équipement électriques et électroniques (y compris matériel informatique)
Research subject code
2506
Research subject group en
Electrical and electronic engineering
Research subject group fr
Génie électrique et électronique
Research subject en
Electron devices
Research subject fr
Dispositifs électroniques
Partie
5
Nb partie
5
Application title
Digital and Memory Circuits in nano-scale CMOS Technologies
Keyword
NSERC
Application summary
Realization of robust integrated circuits in state of the art technologies is becoming increasingly difficult. The technology scaling makes transistors susceptible to process variations, and improper functioning of a single transistor may lead to the chip failure containing several million transistors. Often small as possible transistor sizes are used to reduce power, energy consumption, and to increase the packing density. Unfortunately, transistors with smaller dimensions exhibit a higher susceptibility to process variation. In particular, low-voltage, low-power Static Random Access Memory (SRAM) circuits show higher degree of variation owing to smallest possible transistor dimensions. In this research, we will investigate variability-aware design of digital, SRAM circuits in power and voltage constrained environments. In microprocessors up to 70-80% of transistors are in SRAMs. As a consequence, various aspects of Systems on Chip (SoC) - power, energy, yield, quality, and reliability are influenced by SRAMs. The proposed research has two broad segments - (a) SRAM circuits, and (b) logic circuits. In the first segment, few aspects of SRAMs will be investigated. The key objectives of this research are (i) to lower SRAM power consumption through architectural and circuit innovation. We will design functional SRAMs working at sub-threshold voltages. (ii) To devise circuit techniques to alleviate the impact of process variations on important SRAM blocks such as the sense amplifier. We will investigate new architectures and circuits for the sense amplifier. (iii) Design soft error robust SRAM cells that can recover from single event upsets. In the second segment of the research, we will investigate high speed digital circuits working at the nominal voltage. Research on high speed circuits will entail investigation of high speed logic styles. This work builds on our recent research on Constant Delay (CD) logic style. Building blocks such as adder will be designed to demonstrate effectiveness of new logic families for high-speed applications.