Contribution: Industrial Research Assistance Program – Youth Employment Program
Synthergy Inc
$25,000.00
Power-Efficient Transistor for I/O Applications: Contact Materials & Interfaces
FY 2020-21 · 2020-07-01
Summary
Power-efficiency is a key performance metric for the next-generation of consumer electronics, and is achieved by reducing the power consumption of device components such as input/out (I/O) transistors used in backend processes. Wide-band oxide semiconductors are prime candidates to replace silicon-based I/O transistors, due to its high field tolerance. Their efficiency performance can be further improved by interfacing the transistor's source and drain regions with a contact electrode materials that minimizes contact resistance. The goal of this project is to develop manufacturing recipes for a promising set of select contact materials to achieve ideal minimizes power dissipation and thereby improving power performance.
Department
Program
Industrial Research Assistance Program – Youth Employment Program
Recipient
Location
Edmonton|Edmonton, Alberta, Canada
Recipient Type
For-profit organization
Business Number
773582689
Type
Contribution
Source
Proactive Disclosure - Grants and Contributions
As published
Agreement End Date
2021-06-30
Agreement Number
953243
Agreement Start Date
2020-07-01
Agreement Title
Power-Efficient Transistor for I/O Applications: Contact Materials & Interfaces
Agreement Title (French)
Transistor à faible consommation d'énergie pour les applications E/S : Matériaux de contact et interfaces
Agreement Type
Contribution
Agreement Value
$25,000.00
Amendment Number
0
Coverage
IRAP Youth Employment Program projects stimulate wealth creation for Canada through technological innovation. | Les projets du Programme Emploi-jeunesse du PARI stimulent la création de richesse au Canada grâce à l’innovation technologique.
Description
Power-efficiency is a key performance metric for the next-generation of consumer electronics, and is achieved by reducing the power consumption of device components such as input/out (I/O) transistors used in backend processes. Wide-band oxide semiconductors are prime candidates to replace silicon-based I/O transistors, due to its high field tolerance. Their efficiency performance can be further improved by interfacing the transistor's source and drain regions with a contact electrode materials that minimizes contact resistance. The goal of this project is to develop manufacturing recipes for a promising set of select contact materials to achieve ideal minimizes power dissipation and thereby improving power performance.
Description (French)
L'efficacité énergétique est une mesure de performance clé pour la prochaine génération d'électronique grand public, et est obtenue en réduisant la consommation d'énergie des composantes des appareils tels que les transistors d'entrée/sortie (E/S) utilisés dans les processus de fond. Les semi-conducteurs d'oxyde à large bande sont les principaux candidats pour remplacer les transistors d'entrée/sortie à base de silicium, en raison de leur grande tolérance sur le terrain. Leur efficacité peut être encore améliorée en interfaçant les régions source et drain du transistor avec un matériau d'électrode de contact qui minimise la résistance de contact. L'objectif de ce projet est de créer des recettes de fabrication pour un ensemble prometteur de matériaux de contact sélectionnés, et ce, afin d'obtenir une dissipation de puissance minimale idéale et d'améliorer ainsi les performances de puissance.
Expected Results
The purpose of IRAP’s Youth Employment Program is to assist in increasing the supply of highly qualified people, promoting the benefits of advanced studies, demonstrating federal leadership by investing in the skills required to meet the needs of the knowledge economy and facilitating the transition of highly skilled young people to a rapidly changing labour market.
Expected Results (French)
Le Programme Emploi-jeunesse du PARI contribue à accroître le bassin de personnes hautement qualifiées, fait la promotion des études supérieures, démontre le leadership fédéral grâce aux investissements effectués dans l’acquisition des compétences requises pour répondre aux besoins de l’économie du savoir et facilite la transition des jeunes hautement qualifiés vers un marché du travail en évolution rapide.
Federal Riding
Edmonton Centre
Federal Riding (French)
Edmonton-Centre
Federal Riding Number
48014
NAICS Code
541710
Organization Code
nrc-cnrc
Organization
National Research Council Canada | Conseil national de recherches Canada
Program Name
Industrial Research Assistance Program – Youth Employment Program
Program Name (French)
Programme d’aide à la recherche industrielle – Programme emploi jeunesse
Program Purpose
The purpose of IRAP’s Youth Employment Program is to assist in increasing the supply of highly qualified people, promoting the benefits of advanced studies, demonstrating federal leadership by investing in the skills required to meet the needs of the knowledge economy and facilitating the transition of highly skilled young people to a rapidly changing labour market.
Program Purpose (French)
Le Programme Emploi-jeunesse du PARI contribue à accroître le bassin de personnes hautement qualifiées, fait la promotion des études supérieures, démontre le leadership fédéral grâce aux investissements effectués dans l’acquisition des compétences requises pour répondre aux besoins de l’économie du savoir et facilite la transition des jeunes hautement qualifiés vers un marché du travail en évolution rapide.
Recipient Business Number
773582689
Recipient City
Edmonton|Edmonton
Recipient Country
CA
Recipient Legal Name
Synthergy Inc
Recipient Postal Code
T5J 1M8
Recipient Province or Territory
AB
Recipient Type
F
Reference Number
172-2020-2021-Q2-953243
