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Grant: Strategic Projects - Group

École de technologie supérieure

$187,500.00

GaN HEMT transistor modeling and application to highly efficient and linear amplifier designs

FY 2009-10

Summary
Whether in terrestrial wireless applications, satellite communication and broadcasting or radar applications, power amplifiers play an important role in all of these systems. They often account for a large portion of the infrastructure cost and are largely responsible for their power consumption. Consequently, reducing their power consumption and improving their performance is not only economically important but it is also fast becoming environmentally necessary given the vast number of wireless terminals worldwide. One key to power amplifier performance is the transistor technology on which it is built. In recent years, an emerging semi-conductor technology, Gallium Nitride or GaN, has shown excellent promise in helping make power amplifiers better performing and "greener" for the environment. As its fabrication has become more and more reliable and its cost has continued to come down, this technology is now poised to be the dominant technology in the wireless/satellite power amplifier market in the coming years. To unlock this potential, power amplifier designers must have access to accurate and robust device models for their CAD tools and must consider novel design approaches to take advantage of the unique features offered by GaN technology. This project aims to develop such models and design approaches to enable Canadian companies to take a lead in using and deploying GaN technology, with all the economic and social/environmental benefits this brings.
Program
Strategic Projects - Group
Location
Quebec, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data

As published

Application id
365291-2008
Name nom
Kouki, Ammar
Department département
Génie électrique
Organization id
53
Institution établissement
École de technologie supérieure
Province en
Québec
Province fr
Québec
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2009
Competition year année de concours
2008
Award amount
187500
Program id
STPGP
Program nane en
Strategic Projects - Group
Program name fr
Projets stratégiques - De groupe
Group en
Research partnerships programs
Group fr
Programmes de partenariat
Committee code
1077
Committee name en
Strategic Projects Selection Panel - Communications and Information B
Committee name fr
Comité de sélection des projets stratégiques - Communication et information B
Area of application code
514
Area of application group en
Manufacturing processes and products
Area of application group fr
Procédés et produits industriels
Area of application en
Communications equipment
Area of application fr
Matériel de télécommunications
Research subject code
2520
Research subject group en
Electrical and electronic engineering
Research subject group fr
Génie électrique et électronique
Research subject en
Microwave and millimeterwave devices, circuits and technologies
Research subject fr
Dispositifs, circuits et technologie hyperfréquences et d'ondes millimétriques
Partie
2
Nb partie
3
Application title
GaN HEMT transistor modeling and application to highly efficient and linear amplifier designs
Keyword
NA
Application summary
Whether in terrestrial wireless applications, satellite communication and broadcasting or radar applications, power amplifiers play an important role in all of these systems. They often account for a large portion of the infrastructure cost and are largely responsible for their power consumption. Consequently, reducing their power consumption and improving their performance is not only economically important but it is also fast becoming environmentally necessary given the vast number of wireless terminals worldwide. One key to power amplifier performance is the transistor technology on which it is built. In recent years, an emerging semi-conductor technology, Gallium Nitride or GaN, has shown excellent promise in helping make power amplifiers better performing and "greener" for the environment. As its fabrication has become more and more reliable and its cost has continued to come down, this technology is now poised to be the dominant technology in the wireless/satellite power amplifier market in the coming years. To unlock this potential, power amplifier designers must have access to accurate and robust device models for their CAD tools and must consider novel design approaches to take advantage of the unique features offered by GaN technology. This project aims to develop such models and design approaches to enable Canadian companies to take a lead in using and deploying GaN technology, with all the economic and social/environmental benefits this brings.