Contribution: Industrial Research Assistance Program – Youth Employment Program
Synthergy Inc
$20,000.00
Decreasing the Carbon-Footprint of Atomic Layer Deposited Silicon Nitride
FY 2019-20 · 2019-06-24
Summary
Silicon nitride (SiN) is an important material in the semiconductor industry particularly for logic and memory applications. Atomic layer deposition (ALD) is suited for the growth of SiN films because of its extremely precise film thickness control and high conformality. Currently, most ALD processes are affected by non-idealities including steric hindrance and parasitic non-ALD growth processes. Consequently, this project aims to quantify how these non-idealities and the various growth parameters affect the ALD SiN growth by developing a quantitative ALD model. This predictive ALD model can characterize the efficiency of the SiN deposition and thus provide a roadmap towards reducing the carbon footprint of the ALD SiN process.
Department
Program
Industrial Research Assistance Program – Youth Employment Program
Recipient
Location
Edmonton|Edmonton, Alberta, Canada
Recipient Type
For-profit organization
Business Number
773582689
Type
Contribution
Source
Proactive Disclosure - Grants and Contributions
Amendments
Each version of the agreement as published, oldest first, with its total as of that version. The amount above is the latest.
| Amendment | Date | Fiscal Year | Total |
|---|---|---|---|
| 0 | 2019-06-24 | 2019-20 | $20,000.00 |
| 1 | 2019-06-24 | 2019-20 | $20,000.00 |
As published
Agreement End Date
2019-12-30
Agreement Number
930512
Agreement Start Date
2019-06-24
Agreement Title
Decreasing the Carbon-Footprint of Atomic Layer Deposited Silicon Nitride
Agreement Title (French)
Diminution de l'empreinte carbone du nitrure de silicium déposé dans la couche atomique
Agreement Type
Contribution
Agreement Value
$20,000.00
Amendment Date
2019-06-24
Amendment Number
1
Coverage
IRAP Youth Employment Program projects stimulate wealth creation for Canada through technological innovation. | Les projets du Programme Emploi-jeunesse du PARI stimulent la création de richesse au Canada grâce à l’innovation technologique.
Description
Silicon nitride (SiN) is an important material in the semiconductor industry particularly for logic and memory applications. Atomic layer deposition (ALD) is suited for the growth of SiN films because of its extremely precise film thickness control and high conformality. Currently, most ALD processes are affected by non-idealities including steric hindrance and parasitic non-ALD growth processes. Consequently, this project aims to quantify how these non-idealities and the various growth parameters affect the ALD SiN growth by developing a quantitative ALD model. This predictive ALD model can characterize the efficiency of the SiN deposition and thus provide a roadmap towards reducing the carbon footprint of the ALD SiN process.
Description (French)
Le nitrure de silicium (SiN) est un matériau important dans l'industrie des semi-conducteurs, en particulier pour les applications de logique et de mémoire. Le dépôt de couche atomique (DCA) est adapté à la croissance des films SiN en raison de son contrôle extrêmement précis de l'épaisseur des films et de sa haute conformité. Actuellement, la plupart des processus DCA sont affectés par des facteurs non idéaux, y compris l'entrave stérique et les processus de croissance parasitaires non DCA. Par conséquent, ce projet vise à quantifier l'incidence de ces non-idéalités et des divers paramètres de croissance sur la croissance de DCA SiN en développant un modèle quantitatif de DCA. Ce modèle DCA prédictif peut caractériser l'efficacité du dépôt de SiN et ainsi fournir une feuille de route pour réduire l'empreinte carbone du processus DCA SiN.
Expected Results
The purpose of IRAP’s Youth Employment Program is to assist in increasing the supply of highly qualified people, promoting the benefits of advanced studies, demonstrating federal leadership by investing in the skills required to meet the needs of the knowledge economy and facilitating the transition of highly skilled young people to a rapidly changing labour market.
Expected Results (French)
Le Programme Emploi-jeunesse du PARI contribue à accroître le bassin de personnes hautement qualifiées, fait la promotion des études supérieures, démontre le leadership fédéral grâce aux investissements effectués dans l’acquisition des compétences requises pour répondre aux besoins de l’économie du savoir et facilite la transition des jeunes hautement qualifiés vers un marché du travail en évolution rapide.
Federal Riding
Edmonton Strathcona
Federal Riding (French)
Edmonton Strathcona
Federal Riding Number
48019
NAICS Code
541710
Organization Code
nrc-cnrc
Organization
National Research Council Canada | Conseil national de recherches Canada
Program Name
Industrial Research Assistance Program – Youth Employment Program
Program Name (French)
Programme d’aide à la recherche industrielle – Programme emploi jeunesse
Program Purpose
The purpose of IRAP’s Youth Employment Program is to assist in increasing the supply of highly qualified people, promoting the benefits of advanced studies, demonstrating federal leadership by investing in the skills required to meet the needs of the knowledge economy and facilitating the transition of highly skilled young people to a rapidly changing labour market.
Program Purpose (French)
Le Programme Emploi-jeunesse du PARI contribue à accroître le bassin de personnes hautement qualifiées, fait la promotion des études supérieures, démontre le leadership fédéral grâce aux investissements effectués dans l’acquisition des compétences requises pour répondre aux besoins de l’économie du savoir et facilite la transition des jeunes hautement qualifiés vers un marché du travail en évolution rapide.
Recipient Business Number
773582689
Recipient City
Edmonton|Edmonton
Recipient Country
CA
Recipient Legal Name
Synthergy Inc
Recipient Postal Code
T6G 1R1
Recipient Province or Territory
AB
Recipient Type
F
Reference Number
172-2019-2020-Q2-930512
