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Grant: Collaborative Research and Development Grants

Université de Sherbrooke

$130,435.00

Novel III-V heterostructures and designs for high-performance avalanche photodiode devices

FY 2016-17

Summary
An avalanche photodiode (APD) is a specialized semiconductor device used for the detection of light and, incertain applications, even individual photons. The APDs are therefore typically used in various applicationsrequiring sensitive detection of light. They have been successfully manufactured for operation at differentwavelengths, for ranging applications, and various light sensing solutions. A common feature of these devicesis a multiplication region: a region of very high electric field strength in which excited photo-current causes acascade of impact ionizations yielding a significantly amplified signal at the anode and cathode. There areseveral applications for APD devices in the wavelength range of 1.5microns. The InP-based epitaxial materialshave been perfected to optimize the APD performance using InGaAs and InP heterostructures. The dopingprofiles have been obtained by combining epitaxial doping and diffusion doping technique in these materials.To expand into new applications it is important to further improve the performance of such III-V APDs andcomplement the available baseline products. Specific areas for improvement are dark currents (bulk andsurface), steeper I-V curve in the avalanche region so the APD can be operated more safely further from thebreakdown voltage, and lower intrinsic noise equivalent power for better signal-to-noise ratio (SNR) whenreceiving ultra-low light levels and enabling further ranging in laser-range finder applications. APDs requireexceptional design and process controls since the electric fields that initiate avalanche gain have very tightrequirements and the interaction of the materials and doping levels of the various layers needed to create a III-VAPD are complex with a narrow range of values that can be expected to yield good performance. This CRDproject will allow the optimization of the APD device performance by designing novel heterostructurestrategies with better optimized AlInAs/InGaAs/InP epilayers and doping designs.
Program
Collaborative Research and Development Grants
Location
Quebec, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data

As published

Application id
495842-2016
Name nom
Fafard, Simon
Department département
Génie électrique et génie informatique
Organization id
68
Institution établissement
Université de Sherbrooke
Province en
Québec
Province fr
Québec
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2016
Competition year année de concours
2016
Award amount
130435
Program id
CRDPJ
Program name en
Collaborative Research and Development Grants
Program name fr
Subventions de recherche et développement coopérative
Group en
Research partnerships programs
Group fr
Programmes de partenariat
Committee code
96
Committee name en
RPP Internal Decision Cttee
Committee name fr
Cté de décision interne - PPR
Area of application code
805
Area of application group en
Information and communication services
Area of application group fr
Services d'information et de télécommunications
Area of application en
Communications technologies (satellites, radar, etc.)
Area of application fr
Technologie des télécommunications (satellites, radar,etc.)
Research subject code
3112
Research subject group en
Physics
Research subject group fr
Physique
Research subject en
Photonics
Research subject fr
Photonique
Partie
1
Nb partie
3
Application title
Novel III-V heterostructures and designs for high-performance avalanche photodiode devices
Keyword
NSERC
Application summary
An avalanche photodiode (APD) is a specialized semiconductor device used for the detection of light and, incertain applications, even individual photons. The APDs are therefore typically used in various applicationsrequiring sensitive detection of light. They have been successfully manufactured for operation at differentwavelengths, for ranging applications, and various light sensing solutions. A common feature of these devicesis a multiplication region: a region of very high electric field strength in which excited photo-current causes acascade of impact ionizations yielding a significantly amplified signal at the anode and cathode. There areseveral applications for APD devices in the wavelength range of 1.5microns. The InP-based epitaxial materialshave been perfected to optimize the APD performance using InGaAs and InP heterostructures. The dopingprofiles have been obtained by combining epitaxial doping and diffusion doping technique in these materials.To expand into new applications it is important to further improve the performance of such III-V APDs andcomplement the available baseline products. Specific areas for improvement are dark currents (bulk andsurface), steeper I-V curve in the avalanche region so the APD can be operated more safely further from thebreakdown voltage, and lower intrinsic noise equivalent power for better signal-to-noise ratio (SNR) whenreceiving ultra-low light levels and enabling further ranging in laser-range finder applications. APDs requireexceptional design and process controls since the electric fields that initiate avalanche gain have very tightrequirements and the interaction of the materials and doping levels of the various layers needed to create a III-VAPD are complex with a narrow range of values that can be expected to yield good performance. This CRDproject will allow the optimization of the APD device performance by designing novel heterostructurestrategies with better optimized AlInAs/InGaAs/InP epilayers and doping designs.