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Grant: Collaborative Research and Development Grants

University of Waterloo

$108,153.00

Micrometer sized LEDs for display applications

FY 2017-18

Summary
GaAsP/GaAs based micrometer-sized light emitting diode (µ-LED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical issue can be effectively addressed - the significant efficiency droop observed when the device size shrinks to micrometer range (3-10 µm). In this project, we will work closely with our industry partner - VueReal Technologies Inc., a Waterloo-based high-tech company, to explore and develop a new technical approach that can enhance the optical emission efficiency of µ-LEDs by minimizing the leakage current through the shunt paths over dry-etched mesa sidewalls. The research objectives are 1) To develop an optimized dry and/or wet GaAsP/GaAs etching process for minimizing sidewall defects/impurities, 2) To develop dielectric passivation thin film to passivate sidewall trap centers created during the dry etch process, 3) To fabricate red µ-LED devices for achieving optimum device performance, 4) To develop a new detaching and transferring approach to integrate the red µ-LED devices with an IC backplane substrate. This project will also provide an excellent opportunity for highly qualified personal (HQP) to gain hands-on experience with device fabrication and characterization, as well as display technologies. This collaboration project will provide the much urgently-needed expertise and facilities at the University of Waterloo to the industry partner for their device R&D activities. It is expected that novel display techniques/prototypes derived from this project can be commercialized by the industry partner, which would establish a leadership position for the industry partner within this fast-growing market.
Program
Collaborative Research and Development Grants
Location
Ontario, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data

As published

Application id
496212-2016
Name nom
Ban, Dayan
Department département
Electrical & Computer Engineering
Organization id
33
Institution établissement
University of Waterloo
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2017
Competition year année de concours
2016
Award amount
108153
Program id
CRDPJ
Program name en
Collaborative Research and Development Grants
Program name fr
Subventions de recherche et développement coopérative
Group en
Research partnerships programs
Group fr
Programmes de partenariat
Committee code
96
Committee name en
RPP Internal Decision Cttee
Committee name fr
Cté de décision interne - PPR
Area of application code
500
Area of application group en
Manufacturing processes and products
Area of application group fr
Procédés et produits industriels
Area of application en
Manufacturing processes and products
Area of application fr
Procédés et produits industriels
Research subject code
2500
Research subject group en
Electrical and electronic engineering
Research subject group fr
Génie électrique et électronique
Research subject en
Electrical and electronic engineering
Research subject fr
Génie électrique et électronique
Partie
2
Nb partie
2
Application title
Micrometer sized LEDs for display applications
Keyword
NSERC
Application summary
GaAsP/GaAs based micrometer-sized light emitting diode (µ-LED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical issue can be effectively addressed - the significant efficiency droop observed when the device size shrinks to micrometer range (3-10 µm). In this project, we will work closely with our industry partner - VueReal Technologies Inc., a Waterloo-based high-tech company, to explore and develop a new technical approach that can enhance the optical emission efficiency of µ-LEDs by minimizing the leakage current through the shunt paths over dry-etched mesa sidewalls. The research objectives are 1) To develop an optimized dry and/or wet GaAsP/GaAs etching process for minimizing sidewall defects/impurities, 2) To develop dielectric passivation thin film to passivate sidewall trap centers created during the dry etch process, 3) To fabricate red µ-LED devices for achieving optimum device performance, 4) To develop a new detaching and transferring approach to integrate the red µ-LED devices with an IC backplane substrate. This project will also provide an excellent opportunity for highly qualified personal (HQP) to gain hands-on experience with device fabrication and characterization, as well as display technologies. This collaboration project will provide the much urgently-needed expertise and facilities at the University of Waterloo to the industry partner for their device R&D activities. It is expected that novel display techniques/prototypes derived from this project can be commercialized by the industry partner, which would establish a leadership position for the industry partner within this fast-growing market.