Grant: Collaborative Research and Development Grants

Wide bandgap semiconductors, such as gallium nitride (GaN) are being considered with intense interest as base materials for high power, high voltage, and harsh environment applications. GaN-based electronic devices take advantage of some of the characteristics of the semiconductor to produce high energy density, compact and high operating temperature devices. This project aims at developing a powerful technological platform for GaN-based devices, covering all aspects of electronic device fabrication, from epitaxial deposition tools, to device design, fabrication and testing. Through a collaboration with Osemi Canada, a world leader in GaN-MOSFET technology and epitaxy tools, a strong team of Universtié de Sherbrooke professors and professionals will undertake the development of MOSFET devices and circuits, tailored for high power applications like electrical vehicles and photovoltaic power conversion. The project will also design and test several technologies for epitaxial film deposition, such as gas injection in ultrahigh vacuum, substrate heating, and vacuum chamber geometries.