Grant: Research Tools and Instruments - Category 1 (<$150,000)
University of Waterloo
$149,991.00
Refurbishment of a materials growth system for research into novel quantum materials
FY 2009-10
Summary
The purpose of this Research Tools and Instruments (RTI) Grant proposal is to obtain funding required to purchase, convert and upgrade a molecular beam epitaxy (MBE) system for the synthesis of novel metal chalcogenide quantum materials. The unique and exciting property of these quantum materials is the free flow of electrons across their surfaces with no loss of energy - while the bulk of the crystal remains an insulator. In the past months, theorists have predicted that several bismuth and antimony compounds behave like so-called topological insulators. First results, published in June of 2009 on bismuth telluride bulk crystals confirmed the theoretical predictions. It is now of great importance to be able to quickly grow epitaxial thin film materials with extremely high crystal quality in order to both study the properties of topological insulators in great detail and to enable applications. Particularly exciting is the prospect of being able to study an image magnetic monopole and to develop dramatically faster, almost powerless, and more efficient computer chips. MBE is the method of choice for the synthesis of tailored high-quality heterostructures that show the desired properties at room-temperature. The prime materials system of interest is the tetradymite group. Prominent examples are bismuth selenide (Bi2Se3) and bismuth telluride (Bi2Te3), which are group V/VI narrow bandgap semiconductors. Apart from being suitable for optical devices, Bi2Se3 and Bi2Te3 are used as room-temperature thermoelectric materials. The MBE system to be converted was used for solid state physics research. This system is in excellent condition (the growth chamber reaches a base pressure of 1*10^{-11} Torr) and it can be easily adapted for the proposed V/VI work at minimal cost. The system is outfitted with arsenic and antimony sources, which are also needed for the proposed research (for GaAs buffer layers, As-capping and Sb-based compounds). Critical parts requested include cracker cells for selenium and tellurium, a control software upgrade, a hydrogen cleaning source, as well as analytical tools (RHEED, X-ray detector, line-of-sight mass spectrometer).
Program
Research Tools and Instruments - Category 1 (<$150,000)
Recipient
Location
Ontario, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data
As published
Application id
389859-2010
Name nom
Hesjedal, Thorsten
Department département
Electrical & Computer Engineering
Organization id
33
Institution établissement
University of Waterloo
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2009
Competition year année de concours
2010
Award amount
149991
Program id
EQPEQ
Program nane en
Research Tools and Instruments - Category 1 (<$150,000)
Program name fr
Outils et instruments de recherche - catégorie 1 (<150 000$)
Group en
Discovery grants programs
Group fr
Programmes de subventions à la découverte
Committee code
1505
Committee name en
Physics
Committee name fr
Physique
Area of application code
802
Area of application group en
Information and communication services
Area of application group fr
Services d'information et de télécommunications
Area of application en
Information systems and technology
Area of application fr
Systèmes d'information et technologie de l'information
Research subject code
2000
Research subject group en
Materials science and technology
Research subject group fr
Science et technologie des matériaux
Research subject en
Materials science and technology
Research subject fr
Science et technologie des matériaux
Partie
1
Nb partie
1
Application title
Refurbishment of a materials growth system for research into novel quantum materials
Keyword
NA
Application summary
The purpose of this Research Tools and Instruments (RTI) Grant proposal is to obtain funding required to purchase, convert and upgrade a molecular beam epitaxy (MBE) system for the synthesis of novel metal chalcogenide quantum materials. The unique and exciting property of these quantum materials is the free flow of electrons across their surfaces with no loss of energy - while the bulk of the crystal remains an insulator. In the past months, theorists have predicted that several bismuth and antimony compounds behave like so-called topological insulators. First results, published in June of 2009 on bismuth telluride bulk crystals confirmed the theoretical predictions. It is now of great importance to be able to quickly grow epitaxial thin film materials with extremely high crystal quality in order to both study the properties of topological insulators in great detail and to enable applications. Particularly exciting is the prospect of being able to study an image magnetic monopole and to develop dramatically faster, almost powerless, and more efficient computer chips. MBE is the method of choice for the synthesis of tailored high-quality heterostructures that show the desired properties at room-temperature. The prime materials system of interest is the tetradymite group. Prominent examples are bismuth selenide (Bi2Se3) and bismuth telluride (Bi2Te3), which are group V/VI narrow bandgap semiconductors. Apart from being suitable for optical devices, Bi2Se3 and Bi2Te3 are used as room-temperature thermoelectric materials. The MBE system to be converted was used for solid state physics research. This system is in excellent condition (the growth chamber reaches a base pressure of 1*10^{-11} Torr) and it can be easily adapted for the proposed V/VI work at minimal cost. The system is outfitted with arsenic and antimony sources, which are also needed for the proposed research (for GaAs buffer layers, As-capping and Sb-based compounds). Critical parts requested include cracker cells for selenium and tellurium, a control software upgrade, a hydrogen cleaning source, as well as analytical tools (RHEED, X-ray detector, line-of-sight mass spectrometer).
