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Grant: Discovery Grants Program - Individual

Lakehead University

$30,000.00

Microscopic theory of high-field transport in disordered semiconductors

FY 2010-11

Summary
Advanced methods of theoretical physics based on quantum mechanics enable the calculation of physical properties of materials with a great precision using only information about their atomic structure. In conjunction with powerful supercomputers, this opens new horizons in Material Science: a computer-aided material design. A traditional 'trial and error' approach to material design involves the following steps: the material synthesis followed by an extensive characterisation of properties and, finally, fabrication of a device. In practice, this circle is repeated many times before the desired device characteristics are achieved. The idea of the computer-aided material design is to turn this sequence upside-down. In other words, first to determine requirements to the material and then to identify the atomic structure which provides the target properties. This is where the theoretical physics comes into play. The computer-aided material design will greatly reduce the expenditures associated with development of new materials and will help to improve existing technologies. The proposed research program brings the general idea of the computer-aided material design to a practical application: electronic transport in disordered semiconductors in the presence of a high electric field. This phenomenon governs functioning of: (i) high-sensitivity x-ray and photodetectors, and (ii) new-generation data storage devices. Our ultimate goal is to develop a comprehensive theory of transport of energetic charge carriers in disordered semiconductors, which is capable of predicting the transport properties without involving adjustable parameters. In order to accomplish this goal, we shall employ advanced tools of solid state and statistical physics, such as the density functional theory and kinetic Monte Carlo simulation. This will help (i) to design new detectors with drastically improved sensitivity that allows to reduce the radiation dose per image, and (ii) to make flash-memory devises much faster.
Program
Discovery Grants Program - Individual
Location
Ontario, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data

As published

Application id
386018-2010
Name nom
Rubel, Oleg
Department département
Physics
Organization id
25
Institution établissement
Lakehead University
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2010
Competition year année de concours
2010
Award amount
30000
Program id
RGPIN
Program name en
Discovery Grants Program - Individual
Program name fr
Programme de subventions à la découverte - individuelles
Group en
Discovery grants programs
Group fr
Programmes de subventions à la découverte
Committee code
1505
Committee name en
Physics
Committee name fr
Physique
Area of application code
1208
Area of application group en
Advancement of knowledge
Area of application group fr
Avancement des connaissances
Area of application en
Materials sciences
Area of application fr
Sciences des matériaux
Research subject code
3150
Research subject group en
Theoretical physics and chemistry
Research subject group fr
Physique et chimie théoriques
Research subject en
Theoretical physics and chemistry
Research subject fr
Physique et chimie théoriques
Partie
1
Nb partie
5
Application title
Microscopic theory of high-field transport in disordered semiconductors
Keyword
NSERC
Application summary
Advanced methods of theoretical physics based on quantum mechanics enable the calculation of physical properties of materials with a great precision using only information about their atomic structure. In conjunction with powerful supercomputers, this opens new horizons in Material Science: a computer-aided material design. A traditional 'trial and error' approach to material design involves the following steps: the material synthesis followed by an extensive characterisation of properties and, finally, fabrication of a device. In practice, this circle is repeated many times before the desired device characteristics are achieved. The idea of the computer-aided material design is to turn this sequence upside-down. In other words, first to determine requirements to the material and then to identify the atomic structure which provides the target properties. This is where the theoretical physics comes into play. The computer-aided material design will greatly reduce the expenditures associated with development of new materials and will help to improve existing technologies. The proposed research program brings the general idea of the computer-aided material design to a practical application: electronic transport in disordered semiconductors in the presence of a high electric field. This phenomenon governs functioning of: (i) high-sensitivity x-ray and photodetectors, and (ii) new-generation data storage devices. Our ultimate goal is to develop a comprehensive theory of transport of energetic charge carriers in disordered semiconductors, which is capable of predicting the transport properties without involving adjustable parameters. In order to accomplish this goal, we shall employ advanced tools of solid state and statistical physics, such as the density functional theory and kinetic Monte Carlo simulation. This will help (i) to design new detectors with drastically improved sensitivity that allows to reduce the radiation dose per image, and (ii) to make flash-memory devises much faster.
Lakehead University - $30,000 Grant (2010-11) | Canada Spends