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Grant: Collaborative Research and Development Grants

University of Saskatchewan

$83,136.00

Characterize Single Event Transient Effects and Study Redundant Logic in Digital Circuits using 28 nm FDSOI Technology

FY 2015-16

Summary
Over the last four decades, silicon technology scaling has remarkably improved the integrated circuits (ICs) by increasing the transistor density and operating frequency while reducing the cost and energy consumption per transistor. However, the scaling of silicon technologies makes ICs more vulnerable to single event effects (SEEs) induced by energetic particles. In a well-designed IC, soft errors induced by SEEs appear to be the most troublesome both in terrestrial and high altitude or space environment. Silicon-on-insulator (SOI) process has emerging to be a promising technology for high speed and low power applications. The main objectives of the project are to characterize the single event transient pulses and develop/evaluate the redundant logic techniques by using the most advanced FDSOI process in order to reduce the soft error rate in Cisco's switches and other electronic products. The purpose is to precisely measure the pulse width induced by the ions in this advanced FDSOI technology, and then this information can be used to model the SET and develop corresponding mitigation techniques. We will also develop and evaluate the approximate logic techniques and apply them to realize ARM processors. Device and schematic simulation tools will be used for the investigation, so that SEE mitigation methods can be effectively developed. The fabricated test chips will be tested with pulsed laser, heavy ion, proton and neutron beams to verify the effectiveness of the designs. The results from different testing facilities will also be correlated. One PDF, two Ph.D. students and one mater's student will be trained to advance the technology and to work closely with the industrial partners. The research results will result in patentable technologies and publications in related journals and conferences. The Canadian industry partner (Cisco Canada) can adopt the technologies developed from this project to improve the reliability of their products such as switches and linecards. The project will also enhance the capability and expertise of the research group in the area of microelectronics reliability at the University of Saskatchewan.
Program
Collaborative Research and Development Grants
Location
Saskatchewan, Canada
Recipient Type
Academia
Type
Grant
Source
NSERC's Awards Data

As published

Application id
484339-2015
Name nom
Chen, Li
Department département
Electrical & Computer Engineering
Organization id
16
Institution établissement
University of Saskatchewan
Province en
Saskatchewan
Province fr
Saskatchewan
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2015
Competition year année de concours
2015
Award amount
83136
Program id
CRDPJ
Program name en
Collaborative Research and Development Grants
Program name fr
Subventions de recherche et développement coopérative
Group en
Research partnerships programs
Group fr
Programmes de partenariat
Committee code
96
Committee name en
RPP Internal Decision Cttee
Committee name fr
Cté de décision interne - PPR
Area of application code
804
Area of application group en
Information and communication services
Area of application group fr
Services d'information et de télécommunications
Area of application en
Communication systems and services (planning, organization, services)
Area of application fr
Systèmes et services de communications (planification, organisation et services)
Research subject code
2508
Research subject group en
Electrical and electronic engineering
Research subject group fr
Génie électrique et électronique
Research subject en
Communications networks
Research subject fr
Réseaux de télécommunications
Partie
1
Nb partie
2
Application title
Characterize Single Event Transient Effects and Study Redundant Logic in Digital Circuits using 28 nm FDSOI Technology
Keyword
NSERC
Application summary
Over the last four decades, silicon technology scaling has remarkably improved the integrated circuits (ICs) by increasing the transistor density and operating frequency while reducing the cost and energy consumption per transistor. However, the scaling of silicon technologies makes ICs more vulnerable to single event effects (SEEs) induced by energetic particles. In a well-designed IC, soft errors induced by SEEs appear to be the most troublesome both in terrestrial and high altitude or space environment. Silicon-on-insulator (SOI) process has emerging to be a promising technology for high speed and low power applications. The main objectives of the project are to characterize the single event transient pulses and develop/evaluate the redundant logic techniques by using the most advanced FDSOI process in order to reduce the soft error rate in Cisco's switches and other electronic products. The purpose is to precisely measure the pulse width induced by the ions in this advanced FDSOI technology, and then this information can be used to model the SET and develop corresponding mitigation techniques. We will also develop and evaluate the approximate logic techniques and apply them to realize ARM processors. Device and schematic simulation tools will be used for the investigation, so that SEE mitigation methods can be effectively developed. The fabricated test chips will be tested with pulsed laser, heavy ion, proton and neutron beams to verify the effectiveness of the designs. The results from different testing facilities will also be correlated. One PDF, two Ph.D. students and one mater's student will be trained to advance the technology and to work closely with the industrial partners. The research results will result in patentable technologies and publications in related journals and conferences. The Canadian industry partner (Cisco Canada) can adopt the technologies developed from this project to improve the reliability of their products such as switches and linecards. The project will also enhance the capability and expertise of the research group in the area of microelectronics reliability at the University of Saskatchewan.