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Grant: Alliance Grants

University of Saskatchewan

$100,000.00

Development of radiation tolerant cell libraries and a RISC-V microcontroller with GF 12nm FinFET technology

EF 2022-23

Résumé
The overall objectives of the collaborative project with Cisco Systems (Cisco) and Xiphos Systems (Xihos) are to develop fault-tolerant logic circuits fabricated with the most advanced Globalfundries (GF) 12nm FinFET technologies in order to reduce the soft error rate in partners' electronic products. The size of transistors in the modern integrated circuits (ICs) has been scaled to the nanometer range in modern commercial silicon technologies. As a result, ICs have become more vulnerable to single event effects (SEE) induced by energetic particles from either cosmic rays or packaging materials, which are normally referred to as soft errors. The project's main objectives are to characterize the single event effects in the 12nm FinFET process and develop/evaluate the redundant logic techniques to reduce the soft error rates in digital circuits. FinFET technologies have shown substantial reduction in soft error rate and power compared to bulk technologies, which makes them attractive in many industrial applications. There are two phases in this proposed collaborative project. In the first phase, various fault-tolerant storage components like flip-flops and logic gates will be designed and fabricated in a test chip with this technology. A radiation-tolerant standard cell library will also be developed. In the second phase, a fault-tolerant RISC-V microprocessor will be designed with the fault-tolerant standard cell library to evaluate their soft error performance. In each project phase, a test chip will be designed with the proposed test structures. Ion beams (heavy ions, neutron, and protons) will be used to evaluate the test structures' performance. The investigation will also use an on-campus pulsed laser facility to simulate the ion hits. In addition, device and circuit-level simulation tools will be utilized to model and characterize the test circuits' performance. The research will enable our industrial partner using the cost-effective technologies with the advantages (lower power, higher speed, etc.) of nanoscale CMOS technologies without compromising reliability and performance. Two PhD, one M.Sc, one undergraduate student and one postdoc fellow will be trained in this project alone with producing publications in the silicon reliability field.
Programme
Alliance Grants
Emplacement
Saskatchewan, Canada
Type de bénéficiaire
Academia
Type
Grant
Source
NSERC's Awards Data

Tel que publié

Application id
577110-2022
Name nom
Chen, Li L
Department département
Electrical & Computer Engineering
Organization id
16
Institution établissement
University of Saskatchewan
Province en
Saskatchewan
Province fr
Saskatchewan
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2022
Competition year année de concours
2022
Award amount
100000
Program id
ALLRP
Program name en
Alliance Grants
Program name fr
Subventions Alliance
Group en
RESEARCH PARTNERSHIPS
Group fr
PARTENARIATS DE RECHERCHE
Committee code
96
Committee name en
RPP Internal Decision Cttee
Committee name fr
Cté de décision interne - PPR
Area of application code
703
Area of application group en
Transportation systems and services
Area of application group fr
Services et systèmes de transport
Area of application en
Aerospace
Area of application fr
Aérospatial
Research subject code
2504
Research subject group en
Electrical and electronic engineering
Research subject group fr
Génie électrique et électronique
Research subject en
Integrated circuits
Research subject fr
Circuits intégrés
Installment
inst:1
Partie
1
Nb partie
1
Application title
Development of radiation tolerant cell libraries and a RISC-V microcontroller with GF 12nm FinFET technology
Application summary
The overall objectives of the collaborative project with Cisco Systems (Cisco) and Xiphos Systems (Xihos) are to develop fault-tolerant logic circuits fabricated with the most advanced Globalfundries (GF) 12nm FinFET technologies in order to reduce the soft error rate in partners' electronic products. The size of transistors in the modern integrated circuits (ICs) has been scaled to the nanometer range in modern commercial silicon technologies. As a result, ICs have become more vulnerable to single event effects (SEE) induced by energetic particles from either cosmic rays or packaging materials, which are normally referred to as soft errors. The project's main objectives are to characterize the single event effects in the 12nm FinFET process and develop/evaluate the redundant logic techniques to reduce the soft error rates in digital circuits. FinFET technologies have shown substantial reduction in soft error rate and power compared to bulk technologies, which makes them attractive in many industrial applications. There are two phases in this proposed collaborative project. In the first phase, various fault-tolerant storage components like flip-flops and logic gates will be designed and fabricated in a test chip with this technology. A radiation-tolerant standard cell library will also be developed. In the second phase, a fault-tolerant RISC-V microprocessor will be designed with the fault-tolerant standard cell library to evaluate their soft error performance. In each project phase, a test chip will be designed with the proposed test structures. Ion beams (heavy ions, neutron, and protons) will be used to evaluate the test structures' performance. The investigation will also use an on-campus pulsed laser facility to simulate the ion hits. In addition, device and circuit-level simulation tools will be utilized to model and characterize the test circuits' performance. The research will enable our industrial partner using the cost-effective technologies with the advantages (lower power, higher speed, etc.) of nanoscale CMOS technologies without compromising reliability and performance. Two PhD, one M.Sc, one undergraduate student and one postdoc fellow will be trained in this project alone with producing publications in the silicon reliability field.