Grant: Strategic Projects - Group

Research activities in the last decade have proven that the emerging Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are the superior technology choice for future designs of the power amplifier (PA), which is one the most challenging to design components in a wireless communication link for space and terrestrial communication applications. On the application side, the continuously increasing needs for higher data rates along with the need for beam steering reconfigurability is driving new wireless terrestrial and satellite communication standards to increase the communication bandwidth and operating carrier frequency as well as to adopt advanced transmission solutions such as massive multiple input multiple-output (MIMO) topologies and reconfigurable beam steering. As a consequence, there is currently a high interest in conducting research activities in fully integrated monolithic microwave integrated circuit (MMIC) GaN PA designs suitable for integration with antenna array systems. In this context, this project targets the design of fully integrated MMIC GaN PAs with high efficiency and broad bandwidth at the Ka-band for space and terrestrial wireless communication applications. To achieve this main objective, accurate broadband modeling of GaN transistors will be investigate. This model will be used in the design of high efficiency broadband continuous mode switch mode PAs and load-modulated PAs. Finally, a fully integrated MMIC PA in an LTCC packaging solutions including in-package building block for antenna array system will be demonstrated.This project addresses key area of interest to the supporting organizations. The targeted inventions will help them in the creation of communication networks that are faster, more intelligent, and more energy efficient, thereby allowing Canadians to live with access to better communication services at lower costs while having less impact on the environment.