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Grant: Strategic Projects - Group

University of Waterloo

$149,714.00

Millimeter Wave Semiconductor Device Characterization and Modeling Framework for Holistic Design of Novel 5G Wireless RF Devices

EF 2015-16

Résumé
By 2020, mobile communication traffic is expected to increase 1,000 times from current levels with over 50 billion devices equipped with digital sensing, communication and processing capabilities to enable the ""Internet of Things."" In this digital society, there will be a need for new wireless access technologies (referred to as 5G) to support the deployment of hyper-connected information communication technology (ICT) solutions. 5G will enable access to information anywhere, at any time, by anyone, from anything. 5G technology outcomes will transcend traditional applications such as mobile wireless communication, to underpin a vast array of applications that will impact Canadians socially and economically. 5G will require radically different paradigms for developing low cost and power efficient wireless transceivers; more particularly the underlying transmitters and power amplifiers (PA) for mobile devices, access and backhaul infrastructure, and network topologies. Distinctive challenges face the development of 5G technology including wide bandwidth, high operating frequencies and heterogeneous and ad-hoc networks. However, these challenges offer excellent opportunities for academia and industry to investigate new approaches to creating energy efficient 5G transceivers and PA architectures. Solving these challenges will translate into a share of the 5G market and the resultant economic returns but will require accurate modeling of the nonlinear mechanisms and dynamic properties of semiconductor devices at millimeter wave (mm-wave) frequencies. This project will establish a mm-wave semiconductor device characterization and modeling framework for the holistic design of flexible 5G radio frequency (RF) devices; creating efficient ""bridges"" between device and circuit levels, and between circuit and system levels. It aims to develop physics-based compact and behavioral models capable of accurately predicting semiconductor device behavior at mm-waves. These models will form an integrated electronic design automation backbone to realize RF devices beyond what is possible with contemporary technology.
Programme
Strategic Projects - Group
Emplacement
Ontario, Canada
Type de bénéficiaire
Academia
Type
Grant
Source
NSERC's Awards Data

Tel que publié

Application id
463036-2014
Name nom
Boumaiza, Slim
Department département
Electrical & Computer Engineering
Organization id
33
Institution établissement
University of Waterloo
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2015
Competition year année de concours
2014
Award amount
149714
Program id
STPGP
Program name en
Strategic Projects - Group
Program name fr
Projets stratégiques - De groupe
Group en
Research partnerships programs
Group fr
Programmes de partenariat
Committee code
1567
Committee name en
Strategic Projects Selection Panel - ICT
Committee name fr
Comité de sélection des projets stratégiques - ICT
Area of application code
514
Area of application group en
Manufacturing processes and products
Area of application group fr
Procédés et produits industriels
Area of application en
Communications equipment
Area of application fr
Matériel de télécommunications
Research subject code
2520
Research subject group en
Electrical and electronic engineering
Research subject group fr
Génie électrique et électronique
Research subject en
Microwave and millimeterwave devices, circuits and technologies
Research subject fr
Dispositifs, circuits et technologie hyperfréquences et d'ondes millimétriques
Partie
2
Nb partie
3
Application title
Millimeter Wave Semiconductor Device Characterization and Modeling Framework for Holistic Design of Novel 5G Wireless RF Devices
Keyword
NSERC
Application summary
By 2020, mobile communication traffic is expected to increase 1,000 times from current levels with over 50 billion devices equipped with digital sensing, communication and processing capabilities to enable the ""Internet of Things."" In this digital society, there will be a need for new wireless access technologies (referred to as 5G) to support the deployment of hyper-connected information communication technology (ICT) solutions. 5G will enable access to information anywhere, at any time, by anyone, from anything. 5G technology outcomes will transcend traditional applications such as mobile wireless communication, to underpin a vast array of applications that will impact Canadians socially and economically. 5G will require radically different paradigms for developing low cost and power efficient wireless transceivers; more particularly the underlying transmitters and power amplifiers (PA) for mobile devices, access and backhaul infrastructure, and network topologies. Distinctive challenges face the development of 5G technology including wide bandwidth, high operating frequencies and heterogeneous and ad-hoc networks. However, these challenges offer excellent opportunities for academia and industry to investigate new approaches to creating energy efficient 5G transceivers and PA architectures. Solving these challenges will translate into a share of the 5G market and the resultant economic returns but will require accurate modeling of the nonlinear mechanisms and dynamic properties of semiconductor devices at millimeter wave (mm-wave) frequencies. This project will establish a mm-wave semiconductor device characterization and modeling framework for the holistic design of flexible 5G radio frequency (RF) devices; creating efficient ""bridges"" between device and circuit levels, and between circuit and system levels. It aims to develop physics-based compact and behavioral models capable of accurately predicting semiconductor device behavior at mm-waves. These models will form an integrated electronic design automation backbone to realize RF devices beyond what is possible with contemporary technology.