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Grant: Collaborative Research and Development Grants

University of Ottawa

$144,300.00

Photochemical Strategies to Extend the Lithographic Boundaries

EF 2011-12

Résumé
Two decades ago we pioneered the study of sequential two-photon processes, described as the photochemistry of reaction intermediates. We reviewed the topic in 1988. At the time we frequently talked about two-laser two-color photochemistry, since the laser used to make an intermediate was usually of a different wavelength than that used to irradiate it, frequently leading to products that could not be obtained with a single laser or with a lamp. We usually regarded the -sometimes unavoidable- occurrence of multiphoton processes taking place within a single high-energy laser pulse as a problem. On other projects, we worked on the development of new photoacid generators (PAG) for use in resists for microlithography. We also developed methods to measure acid generation in situ, or more accurately on wafer; these are now well established and widely used in industry. Much of this work was performed at a time when the features in computer chips were larger than the excitation wavelength employed in lithographic imaging. Little did we know that these two areas would 'blend' in the current decade to become the perceived solution to overcome physical limits to increase spatial resolution in tomorrow's computer chips. When Gordon Moore predicted in 1965 that the number of transistors per chip would double every 2 years, the preferred lithographic wavelength was 365 nm and typical features were 10-20 micron. That is, the feature was forty times larger than the wavelength of light that generated it. Moore's law has been followed for about 40 years but is approaching a physics barrier. Today 193 nm laser light is used and the usually quoted resolution limit is ~ 64 nm. Industry has already improved on 64 nm by using double exposure and immersion lithography. They aim at 35 nm features by 2009 and 22 nm shortly after, well below the usually quoted one half or one third of the wavelength. This project aims at obtaining spatial resolution as small as one ninth of the wavelength using two-photon techniques, and to use the new chemistry as a platform from which to explore the next generation lithography, widely expected to involve extreme UV light, essentially a form of soft x-rays.
Programme
Collaborative Research and Development Grants
Bénéficiaire
Emplacement
Ontario, Canada
Type de bénéficiaire
Academia
Type
Grant
Source
NSERC's Awards Data

Tel que publié

Application id
380904-2009
Name nom
Scaiano, JuanCesar
Department département
Chemistry
Organization id
28
Institution établissement
University of Ottawa
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2011
Competition year année de concours
2009
Award amount
144300
Program id
CRDPJ
Program nane en
Collaborative Research and Development Grants
Program name fr
Subventions de recherche et développement coopérative
Group en
Research partnerships programs
Group fr
Programmes de partenariat
Committee code
96
Committee name en
RPP Internal Decision Cttee
Committee name fr
Cté de décision interne - PPR
Area of application code
1208
Area of application group en
Advancement of knowledge
Area of application group fr
Avancement des connaissances
Area of application en
Materials sciences
Area of application fr
Sciences des matériaux
Research subject code
3406
Research subject group en
Physical chemistry
Research subject group fr
Chimie physique
Research subject en
Photochemistry and photophysics
Research subject fr
Photochimie et photophysique
Partie
3
Nb partie
3
Application title
Photochemical Strategies to Extend the Lithographic Boundaries
Keyword
NSERC
Application summary
Two decades ago we pioneered the study of sequential two-photon processes, described as the photochemistry of reaction intermediates. We reviewed the topic in 1988. At the time we frequently talked about two-laser two-color photochemistry, since the laser used to make an intermediate was usually of a different wavelength than that used to irradiate it, frequently leading to products that could not be obtained with a single laser or with a lamp. We usually regarded the -sometimes unavoidable- occurrence of multiphoton processes taking place within a single high-energy laser pulse as a problem. On other projects, we worked on the development of new photoacid generators (PAG) for use in resists for microlithography. We also developed methods to measure acid generation in situ, or more accurately on wafer; these are now well established and widely used in industry. Much of this work was performed at a time when the features in computer chips were larger than the excitation wavelength employed in lithographic imaging. Little did we know that these two areas would 'blend' in the current decade to become the perceived solution to overcome physical limits to increase spatial resolution in tomorrow's computer chips. When Gordon Moore predicted in 1965 that the number of transistors per chip would double every 2 years, the preferred lithographic wavelength was 365 nm and typical features were 10-20 micron. That is, the feature was forty times larger than the wavelength of light that generated it. Moore's law has been followed for about 40 years but is approaching a physics barrier. Today 193 nm laser light is used and the usually quoted resolution limit is ~ 64 nm. Industry has already improved on 64 nm by using double exposure and immersion lithography. They aim at 35 nm features by 2009 and 22 nm shortly after, well below the usually quoted one half or one third of the wavelength. This project aims at obtaining spatial resolution as small as one ninth of the wavelength using two-photon techniques, and to use the new chemistry as a platform from which to explore the next generation lithography, widely expected to involve extreme UV light, essentially a form of soft x-rays.