Grant: Discovery Grants Program - Individual
University of Western Ontario
$15,000.00
Defect-tolerant design techniques for nanotechnology integrated circuits
EF 2007-08
Résumé
Silicon technology will be reaching its last node in year 2016. This is due to the scaling down of the Silicon transistor towards its fundamental physical limitations of operation, causing a real barrier to further advancement. New emerging nanotechnologies, based on new non-Silicon transistors and devices, are needed beyond the year 2016 to meet the projected performance of Very Large Scale Integrated Circuits and system-on-a-chip. However, a large number of defects is expected due to the fabrication imperfections and non-deterministic self-Assembly process of these emerging nanotechnologies. Such high defect density, although not as severe, is also expected for conventional Silicon technology once it reaches its sub-50 nm dimensions. This causes a major limitation for sustaining the growth of Silicon technology requiring extensive work at the circuit level to overcome the presence of high density of defects.This research program focus is on the development of novel circuit techniques robust to the presence of large number of defects in fabricated electronic chips. The objective is to reach the needed defect-tolerance level by using initially hardware redundancy, at the transistor and small gate levels, to mask defective devices and components in conventional Silicon technology. Then more robust circuit techniques will be developed for non-Silicon nanotechnology along with new logic circuit configurations based on emerging nanometer devices. Canadian Microelectronics Corporation provides the design tools and access to advanced Silicon technologies. Such sources will be used for the development of novel circuit techniques to overcome some of the limitations of emerging nanometer devices. Circuit models of these nanoscale devices, especially Carbon Nanotube transistors and diodes, will be developed. This research work is critical to maintain the desired manufacturing yield and the continuous advancement of semiconductor technology. This research will help reduce the industrial need for circuit designers in the nanotechnology field, by providing excellent training opportunity for students at the device- and circuit-level.
Programme
Discovery Grants Program - Individual
Bénéficiaire
Emplacement
Ontario, Canada
Type de bénéficiaire
Academia
Type
Grant
Source
NSERC's Awards Data
Tel que publié
Application id
262767-2007
Name nom
Abid, ZineEddine
Department département
Electrical and Computer Engineering
Organization id
36
Institution établissement
University of Western Ontario
Province en
Ontario
Province fr
Ontario
Country en
CANADA
Country fr
CANADA
Fiscal year exercice financier
2007
Competition year année de concours
2007
Award amount
15000
Program id
RGPIN
Program name en
Discovery Grants Program - Individual
Program name fr
Programme de subventions à la découverte - individuelles
Group en
Discovery grants programs
Group fr
Programmes de subventions à la découverte
Committee code
334
Committee name en
Commun.,Computers & Components
Committee name fr
Communic.,ordin. et composants
Area of application code
802
Area of application group en
Information and communication services
Area of application group fr
Services d'information et de télécommunications
Area of application en
Information systems and technology
Area of application fr
Systèmes d'information et technologie de l'information
Research subject code
2504
Research subject group en
Electrical and electronic engineering
Research subject group fr
Génie électrique et électronique
Research subject en
Integrated circuits
Research subject fr
Circuits intégrés
Partie
1
Nb partie
5
Application title
Defect-tolerant design techniques for nanotechnology integrated circuits
Keyword
NA
Application summary
Silicon technology will be reaching its last node in year 2016. This is due to the scaling down of the Silicon transistor towards its fundamental physical limitations of operation, causing a real barrier to further advancement. New emerging nanotechnologies, based on new non-Silicon transistors and devices, are needed beyond the year 2016 to meet the projected performance of Very Large Scale Integrated Circuits and system-on-a-chip. However, a large number of defects is expected due to the fabrication imperfections and non-deterministic self-Assembly process of these emerging nanotechnologies. Such high defect density, although not as severe, is also expected for conventional Silicon technology once it reaches its sub-50 nm dimensions. This causes a major limitation for sustaining the growth of Silicon technology requiring extensive work at the circuit level to overcome the presence of high density of defects.This research program focus is on the development of novel circuit techniques robust to the presence of large number of defects in fabricated electronic chips. The objective is to reach the needed defect-tolerance level by using initially hardware redundancy, at the transistor and small gate levels, to mask defective devices and components in conventional Silicon technology. Then more robust circuit techniques will be developed for non-Silicon nanotechnology along with new logic circuit configurations based on emerging nanometer devices. Canadian Microelectronics Corporation provides the design tools and access to advanced Silicon technologies. Such sources will be used for the development of novel circuit techniques to overcome some of the limitations of emerging nanometer devices. Circuit models of these nanoscale devices, especially Carbon Nanotube transistors and diodes, will be developed. This research work is critical to maintain the desired manufacturing yield and the continuous advancement of semiconductor technology. This research will help reduce the industrial need for circuit designers in the nanotechnology field, by providing excellent training opportunity for students at the device- and circuit-level.