Grant: Idea to Innovation

This project will develop the technologies to increase the power conversion efficency for Voltage Regulator Module (VRM) used to power the computer CPU (Central processing Unit). Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is exclusively used in VRM. MOSFET is controlled by applying a voltage to the MOSFET gate and source capacitor. Conventionally, a voltage source is used to charge and discharge the gate capacitance. The problem is more gate loss and switching loss. A new method has been proposed by the applicant to charge and discharge of the MOSFET gate capacitance using current source, so called it a current source MOSFET driver (CSD). The current source driver uses a constant current to charge and discharge the gate capacitance. The gate drive loss and switching loss can be significantly reduced. Therefore, the efficiency can be increased. The new technology is best used as a MOSFET driver integrated circuit. In this project, a driver IC will be developed to impelment the current source MSOFET driver. In addition, circuit boards will be built to compare the new driver with the conventional driver and to demonstrate the superior advantages of the new driver. It is expected that the success of the project will pave the way to commercialze the new current source MOSFET driver technology and consequently significantly reduce the energy consumption for our computer power system.