Grant: Idea to Innovation

Thin Film Transistors (TFT) are rapidly becoming a ubiquitous part of the technology landscape. They are integral to the Liquid Crystal Display (LCD). Beyond silicon technologies, Indium Gallium Zinc Oxide (IGZO), are in production are forming the backbone of next generation display technologies. Indium is in relatively short supply for commercial electronics applications. Thin film transistors hold promise for a variety of other applications if manufacturing temperatures can be held to nondestructive levels (<200C). These transistors can be used for distributed switching and local sensor amplification problems that could be considered prinatable in nature. The proposed work seeks to expand on a demonstrated approach that utilizes an indium free low temperature technology that can be implemented on virtually any substrate.Under the support of nanoBridge (University of Alberta Funding) and Discovery grants we have identified and successfully demonstrated a new technology in the Zinc Oxide (ZnO) material system that is suitable for a wide range of commercial development activities. This device offers the potential for lower saturation voltage (Sub 1.0V) (turn on voltage) lower output conductance (efficient load driving) and lower switching energy than any previously reported thin film transistor.While this effort in its current form, with appropriate protection, is suitable for marketing to LCD manufacturers, The proposed work will focus on the demonstration of new applications. Primarily energy harvesting (Demonstration of a printable boost converter) and a pull down device for direct integration into MEMs applications. These new applications can support the development of new industrial endeavors.